| 简介 |
PROBLEM TO BE SOLVED : To inhibit reduction in mobility in a field effect transistor.
SOLUTION : A field effect transistor includes : a semiconductor film; a gate insulation film and a gate electrode which are sequentially laminated on a predetermined region of the semiconductor film; an interlayer insulation film which covers the semiconductor film, the gate insulation film and the gate electrode; a source electrode which is formed on the interlayer insulation film and extend to the inside of a first connection hole piercing the interlayer insulation film to be connected with the semiconductor film; and a drain electrode which is formed on the interlayer insulation film and extends to the inside of a second connection hole piercing the interlayer insulation film to be connected with the semiconductor film, in which the interlayer insulation film is formed by an oxide containing alkaline-earth metal and a rare-earth element.
SELECTED DRAWING : Figure 1
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