| 申请日期 | 2025-08-29 | 申请号 | US15059208 |
| 公开（公告）号 | US10068981B2 | 公开（公告）日 | 2018-09-04 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Lam Research Corporation | ||
| 简介 | Methods of doping semiconductor substrates using deposition of a rare earth metal-containing film such as an yttrium-containing film, and annealing techniques are provided herein. Rare earth metal-containing films are deposited using gas, liquid, or solid precursors without a bias and may be deposited conformally. Some embodiments may involve deposition using a plasma. Substrates may be annealed at temperatures less than about 500° C. | ||
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