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Manufacturing Of Sintered Silicon Nitride Body With High Thermal Conductivity 发明申请

2023-03-29 4060 606K 0

专利信息

申请日期 2025-06-25 申请号 KR1020170024868
公开(公告)号 KR1020180097987A 公开(公告)日 2018-09-03
公开国别 KR 申请人省市代码 全国
申请人 KOREA INSTITUTE OF MACHINERY MATERIALS
简介 The present invention relates to a method for manufacturing a silicon nitride sintered body having a high thermal conductivity. More specifically, the present invention provides a silicon nitride sintered body comprising : a step (S10) of blending Si, A_2O_3, and B_2O_3 raw material powders based on complete nitration of Si to follow a composition of xSi_3N_4-yA_2O_3-zB_2O_3 wherein x, y, and z are mol%; x, y, and z > 0; and A and B are rare earth metals selected from a group consisting of Y, Sc, Nd, and Yb; a step (S20) of mixing the blended raw material powders; a step (S30) of molding the mixed raw material powders; a step (S40) of nitrifying the molded body; and a step (S50) of sintering the nitrified molding body. The present invention provides the silicon nitride sintered body which is advantageous to exhibit a high thermal conductivity by reducing oxygen amounts within the sintered body, and is excellent in terms of thermal and mechanical properties by controlling sintering conditions.COPYRIGHT KIPO 2018


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