| 简介 |
PROBLEM TO BE SOLVED : To provide a dielectric thin film and an electronic component having high temperature load resistance.SOLUTION : The dielectric thin film is comprised of a compound of a perovskite-type structure represented by chemical formula : ABO3, with a site A comprising Ba, Sr and a rare earth, a site B comprising Ti, the rare earth being at least one species selected from the group consisting of La, Pr, Nd, Sm, Eu and Gd, and the content of the rare earth being more than 0.5 mol% and less than 15 mol% relative to 100 mol% of Ti.SELECTED DRAWING : Figure 1COPYRIGHT : (C)2018, JPO&INPIT |
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