| 申请日期 | 2025-07-18 | 申请号 | WOJP18005245 |
| 公开（公告）号 | WO2018155301A1 | 公开（公告）日 | 2018-08-30 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | IDEMITSU KOSAN CO LTD | ||
| 简介 | An oxide semiconductor film which contains In, Ga and Sn at atomic ratios expressed by formula (1) 0.01 ≤ Ga/(In + Ga + Sn) ≤ 0.30, formula (2) 0.01 ≤ Sn/(In + Ga + Sn) ≤ 0.40 and formula (3) 0.55 ≤ In/(In + Ga + Sn) ≤ 0.98, while containing a rare earth element X at an atomic ratio expressed by formula (4) 0.03 ≤ X/(In + Ga + Sn + X) ≤ 0.25. | ||
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