| 申请日期 | 2025-06-25 | 申请号 | US14721402 |
| 公开（公告）号 | US10062618B2 | 公开（公告）日 | 2018-08-28 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | GLOBALFOUNDRIES Inc | ||
| 简介 | Embodiments of the present invention provide a process that maintains a “keep cap” metal nitride layer on PFET devices within a CMOS structure. The keep cap metal nitride layer is in place while an N-type work function metal is formed on the NFET devices within the CMOS structure. A sacrificial rare earth oxide layer, such as a lanthanum oxide layer is used to facilitate removal of the n-type work function metal selective to the keep cap metal nitride layer. | ||
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