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磁性记忆体 发明授权

2023-06-03 1280 2395K 0

专利信息

申请日期 2025-07-11 申请号 TW106104882
公开(公告)号 TWI633542B 公开(公告)日 2018-08-21
公开国别 TW 申请人省市代码 全国
申请人 东芝股份有限公司
简介 A magnetic memory of an embodiment includes : a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.


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