| 简介 |
The present invention provides a field effect transistor. The field effect transistor includes a gate electrode configured to apply a gate voltage; a source electrode and a drain electrode configured to extract a current; an active layer formed of an n-type oxide semiconductor and arranged to be in contact with the source electrode and the drain electrode; and a gate insulating layer disposed between the gate electrode and the active layer. Here, the n-type oxide semiconductor includes at least one selected from a group consisting of Re, Ru, and Os as a dopant. It is possible to provide a field effect transistor having stable characteristics and excellent device characteristics.COPYRIGHT KIPO 2018 |
客服热线：
手机版
二维码
