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Semiconductor device, the semiconductor device small number of method, or semiconductor device hav 发明申请

2023-08-21 3460 15012K 0

专利信息

申请日期 2025-07-12 申请号 KR1020187014022
公开(公告)号 KR1020180084795A 公开(公告)日 2018-07-25
公开国别 KR 申请人省市代码 全国
申请人 SEMICONDUCTOR ENERGY LAB
简介 The transistor includes a first gate electrode, a first insulating film over the first gate electrode, an oxide semiconductor film over the first insulating film, a source electrode over the oxide semiconductor film, a drain electrode over the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a second gate electrode over the second insulating film. The first insulating film includes a first opening. A connection electrode electrically connected to the first gate electrode through the first opening is formed over the first insulating film. The second insulating film includes a second opening that reaches the connection electrode. The second gate electrode includes an oxide conductive film and a metal film over the oxide conductive film. The connection electrode and the second gate electrode are electrically connected to each other through the metal film.


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