| 申请日期 | 2025-07-11 | 申请号 | DE102017100827 |
| 公开（公告）号 | DE102017100827A1 | 公开（公告）日 | 2018-07-19 |
| 公开国别 | DE | 申请人省市代码 | 全国 |
| 申请人 | Infineon Technologies AG | ||
| 简介 | A circumferential embedded structure is formed by laser irradiation in a semiconductor substrate, which is of a semiconductor material. The embedded structure includes a polycrystalline structure of the semiconductor material, and surrounds a central portion of a semiconductor die. The semiconductor die including the embedded structure is separated from the semiconductor substrate. | ||
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