| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing an alumina substrate capable of forming an AlN crystal having higher quality when forming the AlN crystal on the alumina substrate; a method for manufacturing an alumina substrate having an AlN layer having a reduced warp; and a method for manufacturing an alumina substrate capable of achieving a free-standing substrate by natural peeling when excessively applying stress caused by lattice mismatch inevitably occurring, when used as a seed substrate.
SOLUTION : A method for manufacturing an alumina substrate includes the nitriding step of heating a rare earth element containing raw material, a basal alumina substrate 33 and carbon in a nitrogen atmosphere. In the nitriding step, an AlN layer 30 is formed on the surface of the basal alumina substrates in the vicinity of the surface of the basal alumina substrate 33 by replacing oxygen included in the basal alumina substrate with nitrogen, and a rare earth containing layer 31 and/or a region are formed in the inside of the AlN layer or an interface between the AlN layer and the basal alumina substrate.
SELECTED DRAWING : Figure 1
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