| 简介 |
PROBLEM TO BE SOLVED : To provide a RE123 crystal film forming method that can form film at lower temperature and at higher speed compared to the conventional vapor phase epitaxial method, and that does not require vacuum environment.SOLUTION : Provided is a crystal film forming method for film-growing rare earth-based copper oxide high temperature superconductor REBaCuO(where, RE represents a rare earth element, and y represents 6 to 7.) on a substrate, and in which, characterized, by dissolving a raw material adjusted such that the composition ratio of RE : Ba : Cu is between 1 : 2 to 3 : 2 to 7, into fused hydroxide (fused hydroxide method), REBaCuOis film-grown on a substrate in a reducing atmosphere of exceeding 500°C and less than 700°C. |
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