| 简介 |
Provided are an electronic device and a manufacturing method thereof. According to one embodiment of the present invention, the electronic device includes a semiconductor memory capable of improving properties of a variable resistance element. The semiconductor memory comprises : a free layer having a changeable magnetization direction; a fixed layer having a fixed magnetization direction; and a tunnel barrier layer interposed between the free layer and the fixed layer. The free layer includes a first sub layer and a second sub layer having saturation magnetization (Ms) different with the first sub layer.COPYRIGHT KIPO 2018 |
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