| 简介 |
Provided is a method for forming a sealing film on an organic light emitting device and the like at low temperatures using a raw material which does not include a hydrogen atom or a halogen atom. A sealing film manufacturing apparatus (100) comprises : a processing container (1); a stage (3) for arranging a substrate (S) which is a to-be-processed body; and a plasma source (5) for generating a nitrogen-containing plasma (N_2 plasma) (P) in the processing container (1). The processing container (1) is divided into at least two spaces (S1, S2). The space (S1) is a plasma generating unit which introduces noble gas and nitrogen gas for plasma generation to generate nitrogen-containing plasma (P). In addition, the space (S2) is a reaction unit which breaks down a silicon compound not containing a hydrogen atom in a molecule by the nitrogen-containing plasma (P) generated in the space (S1) and deposits a silicon nitride film as a sealing film by a CVD method.(5) Plasma sourceCOPYRIGHT KIPO 2018 |
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