| 申请日期 | 2025-06-27 | 申请号 | US15843674 |
| 公开（公告）号 | US20180198060A1 | 公开（公告）日 | 2018-07-12 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | SK hynix Inc; Toshiba Memory Corporation | ||
| 简介 | An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; a tunnel barrier layer interposed between the free layer and the pinned layer; and an under layer which is in contact with the free layer and includes a rare earth metal nitride. | ||
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