| 简介 |
Disclosed is a metal oxide semiconductor, which is an (In2O3)x(MO)y(RO)z semiconductor material formed by doping a small amount of a rare earth oxide, acting as a photon-generated carrier conversion center, into an indium-containing metal oxide semiconductor. According to the present invention, the characteristic that the radius of rare earth ions is equivalent to that of indium ions is used, and a charge conversion center can be formed by the 4f orbital in the rare earth ions and the 5s orbital of the indium ions, so that the stability under illumination is improved. Further provided are a thin-film transistor based on the metal oxide semiconductor and the use thereof. |
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