| 简介 |
A method for producing a graphene film, comprising the steps of providing a substrate having a catalyst layer in contact with a self-supporting support electrically insulating, the catalyst layer comprising a single crystal region including catalyst weight more than 99.9% platinum or more than 99.9% by mass of a platinum alloy comprising by mass more than 50.0% platinum, the holder having a single crystal region electrically insulating mass containing more than 99.9% of an oxide selected from the MgO, with GeO2, with αx-to-al2o3, pr2o3, α fe2o3, the TiO2, a BaTiO3, CeO 2, ZrO, blaster, ta2o5, SROs, BaZrO3, SrZrO3, LaAlO3 is, YAlO3, PrSeO3, CAD, se2o3, of BaO, lu2o3, la2o3, LaScO3, GdSc2O3, sc2o3, y2o3, SrZrO3, y3al5o12, MgAl2O4 and mixtures thereof, the single crystal region of catalysis is grown on the single crystal region electrically insulating, electrically insulating the single crystal region having a thickness greater than 0.1 mm, the face of the single crystal region of catalysis with a roughness less than 5.0 nm, and then forming a film by epitaxial deposition of graphene contacts the region of the monocrystalline substrate catalysis. |
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