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CHEMICAL-MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR BY USING 发明申请

2023-11-08 1820 477K 0

专利信息

申请日期 2025-07-12 申请号 KR1020160170079
公开(公告)号 KR1020180068424A 公开(公告)日 2018-06-22
公开国别 KR 申请人省市代码 全国
申请人 SOULBRAIN CO LTD
简介 The present invention relates to a chemical mechanical polishing (CMP) slurry composition comprising cerium oxide particles and a solvent. The cerium oxide particles are doped or coated with a rare earth metal and have a cubic shape with one or more vertexes at which three {100} planes cross at right angles and an aspect ratio of primary particles of 2.0 or less. Accordingly, a slurry can be provided, in which a particle size is dense, a shape is uniform, and a polishing rate of the film to be polished is enhanced.COPYRIGHT KIPO 2018


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