| 简介 |
PROBLEM TO BE SOLVED : To provide a susceptor for an Si semiconductor manufacturing apparatus which is constructed only by an easily utilizable element without using rare metals, prevents spreading of impurities from a graphite base material, is hard to cause pinholes etc. and is hard to exhausted; as well as a manufacturing method of the susceptor for an Si semiconductor manufacturing apparatus.
SOLUTION : A susceptor 20 for an Si semiconductor manufacturing apparatus comprises : a base material 4 composed of a graphite; an SiC layer 3 covering the base material 4; and a carbon nano-tube layer 2 covering the surface of the SiC layer 3 and made of a carbon nano-tube 1. A manufacturing method of the susceptor 20 for an Si semiconductor manufacturing apparatus comprises : a CVD step of placing the base material 4 composed of the graphite in a CVD furnace, thereby forming a SiC layer 3; and a surface decomposition step of placing the base material 4 having the SiC layer 3 formed thereon in a heat treatment furnace, followed by heating in a vacuum or in a CO atmosphere, thereby forming the carbon nano-tube layer 2 covering the SiC layer 3 and made of the carbon nano-tube 1.
SELECTED DRAWING : Figure 1
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