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FILM DEPOSITION METHOD 发明申请

2023-03-22 2920 132K 0

专利信息

申请日期 2025-07-09 申请号 JP2016226639
公开(公告)号 JP2018083961A 公开(公告)日 2018-05-31
公开国别 JP 申请人省市代码 全国
申请人 ULVAC JAPAN LTD
简介 PROBLEM TO BE SOLVED : To provide a film deposition method capable of depositing a carbon film at high productivity, while suppressing adhesion of foreign substances to a material on which the film is deposited. SOLUTION : A target 31 made of carbon, adhesion preventive plates 5u, 5d for preventing sputtered particles from adhering to the internal surface of a vacuum chamber 1, and a material S on which a film is deposited are arranged in the vacuum chamber 1. In a film deposition method, a rare gas is introduced in the vacuum chamber as a sputtering gas and sputtering is practiced by supplying power to the target to deposit a carbon film on the surface of the material S and the adhesion preventive plates. The method includes a process to form a carbon nitride layer by introducing a nitrogen-containing gas as another sputtering gas together with the rare gas during the film deposition processing to the plurality of materials. SELECTED DRAWING : Figure 1 COPYRIGHT : (C)2018, JPO&INPIT


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