| 简介 |
PROBLEM TO BE SOLVED : To provide a chamber component protective film having an anti-plasma erosion resistance to an etching reactor article.
SOLUTION : In order to deposit a first protective layer on at least one surface of a chamber component, a plasma erosion deposition process is executed, and a first protective layer is a plasma resistance ceramic having a thickness larger than about 50 microns and pluralities of cracks and pores. After this, in order to deposit a second protective layer over the first protective layer, there is executed an ion assist deposition (IAD) process. A second protective layer is a plasma resistance rare earth oxide having a thickness less than 50 microns and a vacancy percentage of less than 1%, and the second protective layer seals the cracks and pores of the first protective layer thereby to perform a role as a barrier for preventing a reaction with a metal.
SELECTED DRAWING : Figure 6B
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