| 申请日期 | 2025-07-14 | 申请号 | US15712002 |
| 公开（公告）号 | US20180138284A1 | 公开（公告）日 | 2018-05-17 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | IQE plc | ||
| 简介 | Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer. | ||
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