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PREPARATION METHOD OF IGZO SPUTTERING TARGET AND IGZO SPUTTERING TARGET PREPARED THEREBY 发明申请

2023-06-02 2630 384K 0

专利信息

申请日期 2025-07-07 申请号 KR1020160146333
公开(公告)号 KR1020180049874A 公开(公告)日 2018-05-14
公开国别 KR 申请人省市代码 全国
申请人 HEE SUNG METAL LTD
简介 The present invention relates to a regeneration method of an IGZO sputtering target which can reduce consumption of a target material, which is a rare resource, by regenerating the target material in a target after the target is used in a sputtering process. Provided are the regeneration method of an IGZO sputtering target and a sputtering target regerated by the regeneration method, wherein an embodiment of the regeneration method comprises : a step of separating a target main body having a used portion from the used sputtering target from a backing plate; a step of polishing the surface having a used portion to produce a flat surface in the separated target main body; a step of joining a subplate to a new backing plate; and a step of joining the cut target main body on the subplate.COPYRIGHT KIPO 2018


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