| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a SiC single crystal, which raises the C solubility in a solution to improve the growth rate of a SiC single crystal, also suppresses the compositional variation of the solution due to consumption of the SiC component involved in the growth of the single crystal, and stabilizes the condition for growing the single crystal.SOLUTION : The method includes placing a SiC seed crystal 20 on the bottom in a graphite crucible 10; a solution containing Si and C and X (X is at least one selected from a transition metal excluding Sc and Y, Al, Ge and Sn) is made present in the crucible 10; the solution is supercooled to grow a SiC crystal on the seed crystal 20; and a powdery or granular Si and/or SiC raw material 41 is added to the solution 30 from above the graphite crucible 10 while the SiC seed crystal is made to grow. |
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