| 简介 |
PROBLEM TO BE SOLVED : To provide a method for producing a silicon nitride sintered substrate having small warpage and high strength with good yield.
SOLUTION : The method for producing a silicon nitride sintered substrate is provided that has a step of molding a green sheet from a slurry containing 80 to 98.3 mass% of a silicon nitride powder, 0.7 to 10 mass% (in terms of oxide) of a Mg compound powder and 1 to 10 mass% of a rare earth compound powder, a step of freely separably depositing a plurality of green sheets thereby obtaining a deposited body, a step of sintering the green sheet by holding the obtained deposited body at a prescribed temperature in a sintering furnace while the obtained deposited body is put in a sintering container. In the method for producing a silicon nitride sintered substrate, the cooling step has a first cooling zone P3 from a sintering holding temperature to a temperature T3 of less than solidification temperature of a grain boundary phase and a second cooling zone P4 from the temperature T3 to 900°C and first average cooling speed v1 of the first cooling zone P3 is higher than second average cooling speed v2 of the second cooling zone P4.
SELECTED DRAWING : Figure 1
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