| 申请日期 | 2026-03-26 | 申请号 | JP2013260343 |
| 公开（公告）号 | JP6264015B2 | 公开（公告）日 | 2018-01-24 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | 凸版印刷株式会社 | ||
| 简介 | PROBLEM TO BE SOLVED : To easily optimize a threshold voltage in a thin-film transistor having an IGZO film.SOLUTION : In a bottom-gate thin-film transistor having a substrate 1, a gate electrode 2, a gate insulating layer 4, an In-Ga-Zn-O-based semiconductor layer 5 constituting a channel layer, and a protective film 6 coating the semiconductor layer 5, an insulating layer containing a rare-earth hydride 7 having insulation properties is provided on the protective film 6. | ||
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