客服热线:18202992950

CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD 发明申请

2023-06-28 2630 84K 0

专利信息

申请日期 2025-06-26 申请号 JP2016123732
公开(公告)号 JP2017228650A 公开(公告)日 2017-12-28
公开国别 JP 申请人省市代码 全国
申请人 NUFLARE TECHNOLOGY INC
简介 PROBLEM TO BE SOLVED : To improve drawing precision, by calculating the height of the surface of a drawing object substrate with high precision. SOLUTION : A charged particle beam lithography method includes a step of performing initial measurement of the height of the surface at multiple points of a substrate, a step of creating a first approximate surface from the results of initial measurement, a step of performing remeasurement of the surface height in a remeasurement region including a measuring point where the difference of the results of initial measurement and a first approximate surface goes above a predetermined value, a step of creating a second approximate surface from the results of remeasurement, and a step of combining the first and second approximate surfaces. At the time of drawing, substrate surface height of the drawing position is calculated from the approximate surface combining the first and second approximate surfaces, and the focal position of a charged particle beam is adjusted. SELECTED DRAWING : Figure 1 COPYRIGHT : (C)2018, JPO&INPIT


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4