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Pulsed bias current for gain switched semiconductor lasers for amplified spontaneous emission reduct 发明授权

2023-07-31 1130 1313K 0

专利信息

申请日期 2025-06-24 申请号 US14144344
公开(公告)号 US9853411B2 公开(公告)日 2017-12-26
公开国别 US 申请人省市代码 全国
申请人 nLight Photonics Corporation
简介 Gain switched laser diode pulses are used as seed pulses for optical pulse generation. ASE is reduced by applying a prebias to the laser diodes at an amplitude less than that associated with a laser diode threshold. An electrical seed pulse having an amplitude larger than that associated with laser threshold is applied within about 10-100 ns of the prebias pulse. The resulting laser diode pulse can be amplified in a pumped, rare earth doped optical fiber, with reduced ASE.


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