| 申请日期 | 2025-08-22 | 申请号 | US15422724 |
| 公开（公告）号 | US20170365713A1 | 公开（公告）日 | 2017-12-21 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | International Business Machines Corporation | ||
| 简介 | A method of forming a spacer for a vertical transistor is provided. The method includes forming a fin structure that includes a fin on a semiconductor substrate, forming a source junction or a drain junction at an upper surface of the semiconductor substrate and at a base of the fin and epitaxially growing a rare earth oxide (REO) spacer to have a substantially uniform thickness along respective upper surfaces of the source or drain junction and on opposite sides of the fin structure. | ||
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