| 申请日期 | 2026-03-26 | 申请号 | WOUS17035805 |
| 公开（公告）号 | WO2017210629A1 | 公开（公告）日 | 2017-12-07 |
| 公开国别 | WO | 申请人省市代码 | 全国 |
| 申请人 | IQE PLC; CLARK Andrew; DARGIS Rytis; LEBBY Michael; PELZEL Rodney | ||
| 简介 | Structures described herein may include mechanically bonded interlayers for formation between a first Group III-V semiconductor layer and a second semiconductor layer. The mechanically bonded interlayers provide reduced lattice strain by strain balancing between the Group III-V semiconductor layer and the second semiconductor layer, which may be silicon. | ||
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