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Photoresist composition, a resist pattern forming method, polymer and compound 发明授权

2023-04-27 4560 2673K 0

专利信息

申请日期 2025-06-26 申请号 JP2013245494
公开(公告)号 JP6241226B2 公开(公告)日 2017-12-06
公开国别 JP 申请人省市代码 全国
申请人 JSR株式会社
简介 PROBLEM TO BE SOLVED : To provide a photoresist composition which is excellent in LWR performance, CDU performance, resolution, rectangularity of the cross-sectional shape, depth of focus, exposure margin and MEEF performance.SOLUTION : A photoresist composition contains a polymer having structural units containing a group of formula (1) and a radiation-sensitive acid generating agent. In formula (1), Rand Rare each independently a hydrogen atom or a 1-20C monovalent organic group, and at least one of Rand Ris a 1-20C monovalent organic group. The monovalent organic group of Rand Ris preferably an acid-dissociative group.


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