| 简介 |
PROBLEM TO BE SOLVED : To provide a thin film transistor which is excellent in preventing diffusion of an impurity from a substrate to a semiconductor layer and inhibits deterioration in characteristics caused by the diffusion of the impurity.SOLUTION : A thin film transistor 10 comprises : a source electrode 60 and a drain electrode 70; a semiconductor layer 50 provided in contact with the source electrode and the drain electrode; a gate electrode 30 provided to correspond to a channel between the source electrode and the drain electrode; and insulator layers 41, 42 provided between the gate electrode and the semiconductor layer. The insulator layer is composed of a metal oxynitride containing Hf and a rare earth element, especially La. |
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