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A method for separating a semiconductor substrate of this semiconductor, semiconductor substrate as 发明申请

2023-04-27 4670 491K 0

专利信息

申请日期 2025-07-07 申请号 DE102016109693
公开(公告)号 DE102016109693A1 公开(公告)日 2017-11-30
公开国别 DE 申请人省市代码 全国
申请人 Infineon Technologies AG
简介 Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.


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