| 申请日期 | 2026-04-22 | 申请号 | US15165903 |
| 公开（公告）号 | US20170346005A1 | 公开（公告）日 | 2017-11-30 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | IMEC VZW; Katholieke Universiteit Leuven KU LEUVEN R D | ||
| 简介 | A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a rare-earth metal oxide layer. | ||
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