| 简介 |
The present invention provides a silicon target to form a sputtering film capable of forming a silicon-containing thin film with high quality by restricting oscillation when forming a sputtering film. According to the present invention, an n-type silicon target material (10) and a metallic backing plate (20) are bonded through a bonding layer (40). A conductive layer (30) including a material having a work function smaller than the silicon target material (10) is installed in a side surface of the bonding layer (40) of the silicon target material (10). That is, the silicon target material (10) being configured to be bonded to a metal backing plate (20) through the conductive layer (30) and the bonding layer (40). When silicon has a single crystal as a work function of the n-type silicon is generally 4.05 eV, it is necessary that a work function of a material of the conductive layer (30) is smaller than 4.05 eV. As such, such a material may have a lanthanoid element, a rare earth element, an alkali metal element, and an alkaline earth metal element as a main component.COPYRIGHT KIPO 2017 |
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