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Method and system for providing magnetic junctions using thermally assisted spin transfer torque swi 发明授权

2023-11-25 4890 1231K 0

专利信息

申请日期 2025-06-27 申请号 US14981391
公开(公告)号 US9818931B2 公开(公告)日 2017-11-14
公开国别 US 申请人省市代码 全国
申请人 Samsung Electronics Co LTD
简介 A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The write current generates joule heating such that the free layer has a switching temperature greater than room temperature. The free layer includes a multilayer that is temperature sensitive and has at least one bilayer. Each bilayer includes first and second layers. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes a magnetic layer. The multilayer has a room temperature coercivity and a switching temperature coercivity. The switching temperature coercivity is not more than one-half of the room temperature coercivity.


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