| 申请日期 | 2025-07-22 | 申请号 | JP2016113609 |
| 公开（公告）号 | JP6228631B1 | 公开（公告）日 | 2017-11-08 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | 株式会社コベルコ科研 | ||
| 简介 | The invention relates to an Al alloy sputtering target comprising greater than 6 at.% to less than or equal to 17 at.% Cu, with the remainder comprising Al and inevitable impurities. The invention can provide an Al alloy sputtering target that contributes to an improvement in film formation rate and has excellent target manufacturability. | ||
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