| 简介 |
A method may include oxidizing a surface of a silicon-containing substrate to form a layer including silica on the surface of the silicon-containing substrate. The method also may include depositing, from a slurry including at least one rare earth oxide, a layer including the at least one rare earth oxide on the layer including silicon. The method additionally may include heating at least the layer including silica and the layer including the at least one rare earth oxide to cause the silica and the at least one rare earth oxide to react and form a layer including at least one rare earth silicate. |
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