| 申请日期 | 2025-06-29 | 申请号 | US15048797 |
| 公开（公告）号 | US9793368B2 | 公开（公告）日 | 2017-10-17 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Hyeok jun Son; Wan don Kim; Hoon joo Na; Sang jin Hyun; Yoon tae Hwang; Jae yeol Song | ||
| 简介 | Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided. | ||
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