| 申请日期 | 2025-11-26 | 申请号 | EP13849168 |
| 公开（公告）号 | EP2913378B1 | 公开（公告）日 | 2017-10-11 |
| 公开国别 | EP | 申请人省市代码 | 全国 |
| 申请人 | Hamamatsu Photonics K K | ||
| 简介 | A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator. | ||
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