| 简介 |
PROBLEM TO BE SOLVED : To allow easy adjustment of a threshold voltage in a thin film transistor having an IGZO film.SOLUTION : A thin film transistor which has a substrate 1, a gate electrode 2, a gate insulation layer 4, an In-Ga-Zn-O semiconductor layer 5 composing a channel layer and a protection layer 7 for covering the semiconductor layer 5 comprises : an insulation layer 6 which is provided between the semiconductor layer 5 and the protection layer 7 and contains a rare-earth metal hydride. |
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