| 简介 |
PROBLEM TO BE SOLVED : To provide a silicon nitride substrate excellent in insulation properties and high in reliability in the case of being used for a circuit board or the like.
SOLUTION : Provided is a silicon nitride substrate comprising silicon nitride crystal particles and a boundary phase, having a thermal conductivity of 50 W/m K or more, and containing as a sintering assistant, one or more kinds selected from rare earth elements, magnesium, titanium and hafnium by 2 to 14 mass% in terms of oxide, respectively, in which, regarding the cross-sectional structure of the silicon nitride substrate, a ratio of the total length T2 of the boundary phase 3 in the thickness direction to the thickness T1 of the silicon nitride substrate, (T2/T1) is 0.01 to 0.30, the variation from the average value of insulation proof stress when electrodes are contacted with the surface and back surface and measurement is performed by a four terminal method is 15% or lower, and further, the average value of the insulation proof stress is 15 kv/mm or higher.
SELECTED DRAWING : Figure 2
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