| 简介 |
An object of the present invention is to easily and inexpensively provide a nitride semiconductor element substrate having a desired index plane, and a nitride semiconductor element, and also inexpensively provide a technique for a red light-emitting semiconductor element that has a high emission intensity (light output).
The present invention provides a manufacturing method for the nitride semiconductor element substrate and the red light-emitting semiconductor, the method including the following steps : a mask forming step for forming a mask of predetermined shape on a base material made of a metal nitride; a three-dimensional structure growing step for using a selective growing method over the base material on which the mask is formed, and forming a layer on a side surface of which an index plane is higher than the base material, so that the three-dimensional structure of the same material with the base material grows; and an active layer growing step using an organic metal vapor phase epitaxial method to grow an active layer over the side surface of the three-dimensional structure, so that a rare earth element is added to the active layer to replace the metal element of the metal nitride; in the active layer growing step, the active layer of the desired high index plane grows by controlling the growth conditions of the active layer. |
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