| 申请日期 | 2025-07-08 | 申请号 | US16999471 |
| 公开（公告）号 | US20220059668A1 | 公开（公告）日 | 2022-02-24 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Intel Corporation | ||
| 简介 | Disclosed herein are rare-earth materials, structures, and methods for integrated circuit (IC) structures. For example, in some embodiments, a precursor for atomic layer deposition (ALD) of a rare-earth material in an IC structure may include a rare-earth element and a pincer ligand bonded to the rare-earth element. | ||
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