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CMOS compatible rare-earth-doped waveguide amplifier 发明授权

2023-05-10 4370 1047K 0

专利信息

申请日期 2025-09-05 申请号 US15389567
公开(公告)号 US9742144B1 公开(公告)日 2017-08-22
公开国别 US 申请人省市代码 全国
申请人 LGS INNOVATIONS LLC INC
简介 The present application is directed to a planar waveguide amplifier. The planar waveguide amplifier includes a substrate having an upper surface and a lower surface. The planar waveguide amplifier includes a core formed on an upper surface of the substrate. The core includes a channel configured to transmit light there through. The planar waveguide amplifier also includes an upper cladding layer formed above the core. The upper cladding layer includes a glass doped with rare earth material in an amount less than about 5% of the upper cladding layer. The application is also directed to a method of amplifying a signal.


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