| 简介 |
PROBLEM TO BE SOLVED : To provide stable electric characteristics to a semiconductor device using an oxide semiconductor to achieve high reliability.
SOLUTION : Provided are a transistor including an oxide semiconductor layer in which buffer layers composed of a component similar to that of the oxide semiconductor layer are provided in contact with an upper face part and a lower face part of the oxide semiconductor layer, and a semiconductor device including the transistor. As the buffer layer contacting the oxide semiconductor layer, a film containing an oxide of one or more elements selected from aluminum, gallium, zirconium, hafnium and rare earth elements can be applied.
SELECTED DRAWING : Figure 1
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