客服热线:18202992950

ALUMINUM NITRIDE SUBSTRATE, PART FOR SEMICONDUCTOR MANUFACTURING, CVD HEATER, AND METHOD FOR MANU 发明申请

2023-07-27 3680 156K 0

专利信息

申请日期 2025-06-27 申请号 JP2016013646
公开(公告)号 JP2017135250A 公开(公告)日 2017-08-03
公开国别 JP 申请人省市代码 全国
申请人 NGK SPARK PLUG CO LTD
简介 PROBLEM TO BE SOLVED : To provide : an aluminum nitride substrate which enables the suppression of occurrence of the warp or warpage of an aluminum nitride substrate even in the case of using no restraining sheet; a part for semiconductor manufacturing, a CVD heater, and a method for manufacturing an aluminum nitride substrate. SOLUTION : An aluminum nitride substrate 1 is composed of a sintered compact including aluminum nitride, and an auxiliary component including at least rare earth element of a rare earth element and an alkali-earth metal. The aluminum nitride substrate 1 comprises : laminates 15 and 17 each including two or more kinds of layers different in composition, which are stacked in a thickness direction of the aluminum nitride substrate 1. SELECTED DRAWING : Figure 1 COPYRIGHT : (C)2017, JPO&INPIT


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4