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Acoustic wave resonators with doped piezoelectric material and frame members 发明授权

2023-01-02 1890 1661K 0

专利信息

申请日期 2025-06-28 申请号 DE102014105952
公开(公告)号 DE102014105952B4 公开(公告)日 2017-07-13
公开国别 DE 申请人省市代码 全国
申请人 Avago Technologies General IP (Singapore) Pte Ltd
简介 A bulk acoustic wave (BAW) resonator includes a first electrode; a second electrode; and a piezoelectric layer disposed between the first and second electrodes. The piezoelectric layer includes a piezoelectric material doped with at least one rare earth element. In an embodiment, the BAW resonator includes a recessed frame element disposed over a surface of at least one of the first and second electrodes. In another embodiment, the BAW resonator includes a raised frame element disposed over a surface of at least one of the first and second electrodes. In yet another embodiment, the BAW resonator includes both the raised and recessed frame elements.


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