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Continuous Process Incorporating Atomic Layer Etching 发明申请

2023-04-26 4090 753K 0

专利信息

申请日期 2025-06-27 申请号 KR1020160181322
公开(公告)号 KR1020170077841A 公开(公告)日 2017-07-06
公开国别 KR 申请人省市代码 全国
申请人 ASM IP HOLDING B V
简介 A method of continuously fabricating a layered structure on a substrate having a patterned recess, comprises the following steps of : (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using first RF power; and (ii) continuously, after completion of the step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1, 333 Pa throughout the steps (i) and (ii), a noble gas is supplied to the inside of the reaction chamber continuously throughout the steps (i) and (ii), and the second RF power is higher than the first RF power.COPYRIGHT KIPO 2017


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