| 简介 |
Method of making semiconductor nanocrystals, comprising at least one carrying out the following steps : - ion bombardment of a thin layer (102) semiconductor disposed on at least one dielectric layer (104), performing an implantation of ions of at least one chemical element type rare gas and/or ions of at least one semiconductor element of the same type as that of the thin layer, in at least a portion of the thickness of the thin layer; - annealing the thin layer by performing a dewetting of the semiconductor of the thin layer and forming, on the dielectric layer, the semiconductor nanocrystal. |
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